Sreenivasulu VB, Narendar V (2021) Junctionless gate-all-around nanowire FET with asymmetric spacer for continued scaling. Microelectron J 116:105214ĭas SK, Nanda U, Biswal SM, Pandey CK, Giri LI (2021) Performance analysis of gate-stack dual-material DG-MOSFET using work-function modulation technique for lower technology nodes. Sreenivasulu VB, Narendar V (2021) Characterization and optimization of junctionless gate-all-around vertically stacked nanowire FETs for sub-5 nm technology nodes. 463–466īhol K, Nanda U (2022) Nanowire array-based mosFET for future cmos technology to attain the ultimate scaling limit. In: IEEE International Electron Devices Meeting, 2005. Kam H, Lee DT, Howe RT, King T-J (2005) A new nano-electro-mechanical field effect transistor (nemFET) design for low-power electronics. Sengupta SJ, Goswami B, Das P, Sarkar SK (2021) A noise immune double suspended gate mosFET for ultra-low power applications. *This information is for general informational purposes only, we will not be liable for any loss or damage caused by the above information.Ramaswamy S, Kumar MJ (2014) Junctionless impact ionization mos: Proposal and investigation. The company was acquired by ON Semiconductor in 2016 and its products and technologies continue to be developed and sold under the ON Semiconductor brand. The company was known for its innovation in the development of the first commercial transistor and for its contributions to the advancement of the integrated circuit technology.įairchild became a leading supplier of power semiconductors, analog and mixed-signal integrated circuits, and other semiconductor products. N-Channel Enhancement Mode Field Effect Transistorįairchild Semiconductor was a pioneering semiconductor company that was founded in the late 1950s.
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